Keywords: Hg1-xCdxTe nanostructures, molecular beam epitaxy, barriers, wells, periodic structures, ellipsometric parameters, nanotechnology, thickness control, variation control, nanolayers, infrared detectors, semiconductors
Growth of Hg1-xCdxTe nanostructures by molecular beam epitaxy with ellipsometric control
We demonstrate the growth of potential barriers, wells and periodic nanostructures on the basis of Hg1-xCdxTe by molecular beam epitaxy. In situ single wavelength ellipsometry is used for control of thickness and variation of Hg1-xCdxTe composition. The behavior of ellipsometric parameters measured during the growth of potential barriers, wells and periodic structures are in good agreement with the numerical calculated of variation of ellipsometric parameters ψ and Δ. The thickness and composition of Hg1-xCdxTe nanolayers were determined from comparison of experimental and calculated ψ and Δ. The accuracy of nanolayer thickness determination reaches the value of 0.1 nm and composition ±0.002 mole fraction.